D2PAK
BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profil...
D2PAK
BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for standard level gate drive
sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID
Quick reference data Parameter drain-source
voltage drain current
Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit - - 30 V [1] - - 75 A - - 255 W - 2.9 3.4 mΩ
- - 1.3 J
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description G g...