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BUK764R0-55B Datasheet

Part Number BUK764R0-55B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK764R0-55B DatasheetBUK764R0-55B Datasheet (PDF)

D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses .

  BUK764R0-55B   BUK764R0-55B






Part Number BUK764R0-55B
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK764R0-55B DatasheetBUK764R0-55B Datasheet (PDF)

BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses du.

  BUK764R0-55B   BUK764R0-55B







N-Channel MOSFET

D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 55 75 300 V A W Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; resistance Tj = 25 °C; see Figure 7; see Figure 12 3.4 4 mΩ NXP Semiconductors BUK764R0-55B N-channel TrenchMOS standard level FET Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VD.


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