BUK764R0-75C

D2 PA K BUK764R0-75C N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC-Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment due to 175 °C rating 1.3 Applications „ 12 V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain current total power dissipation Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 [1][2] Min - Typ - Max 75 100 333 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C NXP Semiconductors BUK764R0-75C N-channel TrenchMOS standard level FET Quick reference data …continued Parameter drain-source on-state resistance Conditions VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 7; see Figure 8 Min Typ 3.4 Max 4 Unit mΩ Table 1. Symbol RDSon Static characteristics IGSS gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 75 V; RGS = 50 Ω; ...