D2 PA K
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profi...
D2 PA K
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC-Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment due to 175 °C rating
1.3 Applications
12 V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain current total power dissipation Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2
[1][2]
Min -
Typ -
Max 75 100 333
Unit V A W
drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
NXP Semiconductors
BUK764R0-75C
N-channel TrenchMOS standard level FET
Quick reference data …continued Parameter drain-source on-state resistance Conditions VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 7; see Figure 8 Min Typ 3.4 Max 4 Unit mΩ
Table 1. Symbol RDSon
Static characteristics
IGSS
gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 75 V; RGS = 50 Ω; ...