D2 PA K
BUK7660-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 7 February 2011 Product data sheet
1. Product pr...
D2 PA K
BUK7660-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 7 February 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12; see Figure 13 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 20 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 110 mJ Min Typ Max Unit 100 26 106 150 V A W mΩ
Static characteristics
-
51
60
mΩ
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
2. Pinning information
...