BUK7675-55A

D2 PA K BUK7675-55A N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Automotive and general purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 10 A; Tj = 175 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 11; see Figure 12 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 11 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 30.3 mJ Min Typ Max Unit 55 V 20.3 A 62 150 W mΩ Static characteristics - 64 75 mΩ NXP Semiconductors BUK7675-55A N-channel TrenchMOS standard level FET 2. Pinning information Table 2....