BUK7880-55A

BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 150 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V and 24 V loads 1.4 Quick reference data I EDS(AL)S ≤ 53 mJ I ID ≤ 7 A I RDSon = 68 mΩ (typ) I Ptot ≤ 8 W 2. Pinning information Table 1. Pin 1 2 3 4 Pinning Description gate (G) drain (D) source (S) solder point; connected to drain (D) mbb076 Simplified outline 4 Symbol D G S 1 2 3 sot223_so SOT223 (SC-73) NXP Semiconductors BUK7880-55A N-channel TrenchMOS standard level FET 3. Ordering information www.datasheet4u.com Table 2. Ordering information Package Name Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 SC-73 Type number BUK7880-55A 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM EDS(AL)S EDS(AL)R Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature reverse drain current ...