BUK7905-40AI

BUK7905-40AI N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Reduced component count due to integrated current sensor „ Suitable for standard level gate drive sources 1.3 Applications „ Electrical Power Assisted Steering (EPAS) „ Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V ID drain current VGS = 10 V; Tmb = 25 °C; [1] - - 155 A see Figure 2; see Figure 3; Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 4.5 5 mΩ ID/Isense ratio of drain current Tj > -55 °C; VGS > 10 V; to sense current Tj < 175 °C 450 500 550 [1] Current is limited by power dissipation chip rating. NXP Semiconductors BUK7905-40AI N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2 ISENSE current sense 3D drain 4 KS Kel...