BUK7907-55AIE

www.DataSheet4U.com BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 — 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55AIE in SOT263B (TO-220AB). 1.2 Features s Integrated current sensor s ESD protection s Q101 compliant s Standard level compatible. 1.3 Applications s Variable Valve Timing for engines s Electrical Power Assisted Steering. 1.4 Quick reference data s VDS ≤ 55 V s ID ≤ 140 A s RDSon = 5.8 mΩ (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline mb mb Description gate (g) Isense drain (d) Kelvin source source (s) mounting base; connected to drain (d) Symbol d 1 2 3 4 5 g Front view MBK127 MBL368 Isense s Kelvin source 1 5 MBL263 SOT426 (D2-PAK) SOT263B (TO-220AB) Philips Semiconductors BUK71/7907-55AIE TrenchPLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) ...