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BUK7907-55ATE

NXP

N-channel TrenchPLUS standard level FET

BUK7907-55ATE N-channel TrenchPLUS standard level FET Rev. 03 — 9 February 2009 Product data sheet 1. Product profil...


NXP

BUK7907-55ATE

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BUK7907-55ATE N-channel TrenchPLUS standard level FET Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Q101 compliant „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance 1.3 Applications „ 12 V and 24 V high power motor drives „ Automotive and general purpose power switching „ Electrical Power Assisted Steering (EPAS) „ Protected drive for lamps 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS ID Ptot Tj RDSon drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3 Tmb = 25 °C; see Figure 1 VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7; see Figure 8 VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 SF(TSD) temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C temperature coefficient VF(TSD) temperature sense diode IF =...




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