BUK7C06-40AITE

BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ElectroStatic Discharge (ESD) and overtemperature protection. www.DataSheet4U.com 1.2 Features s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor 1.3 Applications s Variable valve timing for engines s Automotive and power switching s Electrical power assisted steering s Fan control 1.4 Quick reference data s VDS ≤ 40 V s ID ≤ 155 A s RDSon = 4.7 mΩ (typ) s VF = 658 mV (typ) s SF = −1.54 mV/K (typ) s ID/Isense = 615 (typ) 2. Pinning information Table 1: Pin 1 2 3 4 5 6 7 mb Pinning Description gate (G) Isense anode (A) drain (D) cathode (K) kelvin source source (S) mounting base; connected to drain (D) 4 123 567 G mb D A Simplified outline Symbol SOT427 (D2PAK) Isense S K Kelvin source sym110 Philips Semiconductors BUK7C06-40AITE N-channel TrenchMOS standard level FET 3. Ordering information Table 2: Ordering information Package Name BUK7C06-40AITE D2PAK Description Plastic single-ended surface mounted package; 7 leads (one lead cropped) Version SOT427 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). w w w . D...