BUK7C10-75AITE

BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 — 17 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Reduced component count due to integrated current sensor 1.3 Applications „ Automotive and general purpose power switching „ Fan control „ Electrical Power Assisted Steering (EPAS) „ Variable Valve Timing for engines 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 2; [1] see Figure 3 VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 Tj > -55 °C; Tj < 175 °C; VGS > 10 V IF = 250 µA; Tj > -55 °C; Tj < 175 °C IF = 250 µA; Tj = 25 °C Min Typ Max 75 114 Unit V A Static characteristics RDSon ID/Isense SF(TSD) VF(TSD) drain-source on-state resistance ratio of drain current...