BUK7E4R3-75C

I2P AK BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 7; see Figure 8 ID = 100 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1][2] Min - Typ 3.7 Max 75 100 333 4.3 Unit V A W mΩ Static characteristics Avalanche ruggedness EDS(AL)S 630 mJ [1] [2] Continuous current is limited by package. Refer to document 9397 750 12572 for further information. NXP Semiconductors BUK7E4R3-75C N-channel TrenchMOS standard level FET 2. Pinning information Table ...