BUK7K12-60E

LF BUK7K12-60E 11 December 2013 PA K 56D Dual N-channel 60 V, 9.3 mΩ standard level MOSFET Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 10 A; Tj = 25 °C; Fig. 11 ID = 10 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 40 68 Unit V A W Static characteristics FET1 and FET2 drain-source on-state resistance 7.64 9.3 mΩ Dynamic characteristics FET1 and FET2 QGD gate-drain charge 11 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET 5. Pinning information Ta...