LF
BUK7K35-60E
15 November 2013
PA K
56D
Dual N-channel 60 V, 30 mΩ standard level MOSFET
Product data sheet
1. Ge...
LF
BUK7K35-60E
15 November 2013
PA K
56D
Dual N-channel 60 V, 30 mΩ standard level
MOSFET
Product data sheet
1. General description
Dual standard level N-channel
MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual
MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) of greater than 1 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 Min Typ Max 60 20.7 38 Unit V A W
Static characteristics FET1 and FET2 drain-source on-state resistance gate-drain charge 24 30 mΩ
Dynamic characteristics FET1 and FET2 QGD ID = 5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 14; Fig. 13 4.7 nC
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NXP Semiconductors
BUK7K35-60E
Dual N-channel 60 V, 30 mΩ standard level
MOSFET
5. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Descript...