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BUK7K52-60E Datasheet

Part Number BUK7K52-60E
Manufacturers nexperia
Logo nexperia
Description dual N-channel MOSFET
Datasheet BUK7K52-60E DatasheetBUK7K52-60E Datasheet (PDF)

BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rati.

  BUK7K52-60E   BUK7K52-60E






Part Number BUK7K52-60E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description Dual N-Channel MOSFET
Datasheet BUK7K52-60E DatasheetBUK7K52-60E Datasheet (PDF)

LF BUK7K52-60E 10 December 2013 PA K 56D Dual N-channel 60 V, 45 mΩ standard level MOSFET Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • • Dual MOSFET Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments du.

  BUK7K52-60E   BUK7K52-60E







dual N-channel MOSFET

BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) of greater than 1 V at 175 °C 3. Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics FET1 and FET2 RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics FET1 and FET2 QGD gate-drain charge ID = 5 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 60 V - - 15.4 A - - 32 W - 35 45 mΩ - 3.5 - nC Nexperia BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 d.


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