BUK7M8R5-40H
N-channel 40 V, 8.5 mΩ standard level MOSFET in LFPAK33
5 February 2019
Product data sheet
1. General description
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
2. Features and benefits
• Fully automotive qualified to AEC-Q101 at 175 °C • Trench 9 superjunction technology:
• Low power losses, high power de.
N-channel MOSFET
BUK7M8R5-40H
N-channel 40 V, 8.5 mΩ standard level MOSFET in LFPAK33
5 February 2019
Product data sheet
1. General description
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
2. Features and benefits
• Fully automotive qualified to AEC-Q101 at 175 °C • Trench 9 superjunction technology:
• Low power losses, high power density • LFPAK copper clip package technology:
• High robustness and reliability • Gull wing leads for high manufacturability and AOI • Repetitive avalanche rated
3. Applications
• 12 V automotive systems • Powertrain, chassis, body and infotainment applications • Medium/Low power motor drive • DC-DC systems • LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode Qr recovered charge
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
[1]
VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig. 11
ID = 15 A; VDS = 32 V; VGS = 10 V; Fig. 13; Fig. 14
IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V
Min Typ Max Unit - - 40 V - - 40 A - - 59 W
5.2 7.4 8.5 mΩ
- 2.6 5.2 nC
- 15 - nC
Nexperia
BUK7M8R5-40H
N-channel 40 V, 8.5 mΩ st.