BUK7M9R9-60E

BUK7M9R9-60E N-channel 60 V, 9.9 mΩ standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C; resistance Fig. 11 Dynamic characteristics QGD gate-drain charge ID = 15 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 60 V - - 60 A - - 79 W - 8 9.9 mΩ - 10.4 - nC Nexperia BUK7M9R9-60E N-channel 60 V, 9.9 mΩ standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S Source 2 S Source 3 S Source 4 G Gate mb D Mounting base; connected to drain 1...