BUK7Y18-75B

LFPAK56 BUK7Y18-75B N-channel TrenchMOS standard level FET 1 March 2013 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 3. Applications 12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters Engine management General purpose power switching Motors, lamps and solenoids Transmission control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 4 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; resistance Fig. 12; Fig. 13 Dynamic characteristics QGD gate-drain charge ID = 20 A; VDS = 60 V; VGS = 10 V; Fig. 14 Min Typ Max Unit - - 75 V - - 49 A - - 105 W - 13.8 18 mΩ - 14.24 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y18-75B N-channel TrenchMOS standard level FET Symbol Parameter Avalanche ruggedness EDS(AL)S non-repeti...