BUK7Y20-30B

BUK7Y20-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Loads  Automotive systems  General purpose power switch  Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 30 V 39.5 A 59 W Static characteristics RDSon VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 16 20 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 39.5 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped gate-drain charge ID = 20 A; VDS = 24 V; VGS = 10 V; see Figure 14 45 mJ Dynamic characteristics QGD 3.84 nC NXP Semiconductors BUK7Y20-30B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 ...