BUK7Y4R8-60E

LF BUK7Y4R8-60E 7 May 2013 PA K 56 N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 48 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. [1] Min - Typ - Max 60 100 238 Unit V A W Static characteristics drain-source on-state resistance 2.9 4.8 mΩ Dynamic characteristics QGD gate-drain charge 22.2 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y4R8-60E N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning inform...