BUK7Y53-100B

BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Q101 compliant „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive systems „ DC-to-DC converters „ Engine management „ General purpose power switching „ Solenoid drivers „ Transmission control 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 100 V 24.8 A 85 W Static characteristics RDSon VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 12; see Figure 13 40 53 mΩ NXP Semiconductors BUK7Y53-100B N-channel TrenchMOS standard level FET Quick reference data …continued Parameter Conditions Min Typ Max Unit 81 mJ Table 1. Symbol EDS(AL)S Avalanche ruggedness non-repetitive ID = 24.8 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) =...