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BUK7Y9R9-80E Datasheet

Part Number BUK7Y9R9-80E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel 80V 9.9m ohm standard level MOSFET
Datasheet BUK7Y9R9-80E DatasheetBUK7Y9R9-80E Datasheet (PDF)

LF BUK7Y9R9-80E 8 May 2013 PA K 56 N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True .

  BUK7Y9R9-80E   BUK7Y9R9-80E






Part Number BUK7Y9R9-80E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK7Y9R9-80E DatasheetBUK7Y9R9-80E Datasheet (PDF)

BUK7Y9R9-80E N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard leve.

  BUK7Y9R9-80E   BUK7Y9R9-80E







N-channel 80V 9.9m ohm standard level MOSFET

LF BUK7Y9R9-80E 8 May 2013 PA K 56 N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 VGS = 10 V; ID = 25 A; VDS = 64 V; Fig. 13; Fig. 14 14.4 nC Min Typ Max 80 89 195 Unit V A W Static characteristics drain-source on-state resistance 7.3 9.9 mΩ Dynamic characteristics QGD gate-drain charge Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK7Y9R9-80E N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source .


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