BUK95/9610-100B
TrenchMOS™ logic level FET
Rev. 02 — 8 October 2002 Product data
1. Product profile
1.1 Description
N-ch...
BUK95/9610-100B
TrenchMOS™ logic level FET
Rev. 02 — 8 October 2002 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V, and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 629 mJ s ID ≤ 75 A s RDSon = 8.6 mΩ (typ) s Ptot ≤ 300 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
2
MBK106
Simplified outline
mb
Symbol
mb d
[1]
g s
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1]
SOT404
(D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source
voltage (DC) drain-gate
voltage (DC) gate-source
voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipa...