D2 PA K
BUK9616-75B
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011 Product data sheet
1. Product profi...
D2 PA K
BUK9616-75B
N-channel TrenchMOS logic level FET
Rev. 02 — 16 February 2011 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 67 157 V A W
Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 12 14 14 mΩ
16.4 mΩ
NXP Semiconductors
BUK9616-75B
N-channel TrenchMOS logic level FET
Quick reference data …continued Parameter Conditions Min Typ Max Unit 140 mJ
Table 1. Symbol EDS(AL)S
Avalanche ruggedness non-repetitive ID = 67 A; Vsup ≤ 75 V; drain-source RGS = 50 Ω; VGS = 5 V; avalanche energy Tj(init)...