BUK9635-55A

D2 PA K BUK9635-55A N-channel TrenchMOS logic level FET Rev. 2 — 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 14 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped 49 mJ Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ 24 26 Max Unit 55 34 85 32 35 V A W mΩ mΩ Static characteristics NXP Semiconductors BUK9635-55A N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain 2 1 3 mb D Simplified outline Graphic symbol G mbb076 S SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Package Name BUK9635-55A D2PAK Description plastic single-ended surface-mou...