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BUK963R3-60E Datasheet

Part Number BUK963R3-60E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK963R3-60E DatasheetBUK963R3-60E Datasheet (PDF)

BUK963R3-60E 20 July 2012 N-channel TrenchMOS logic level FET Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VG.

  BUK963R3-60E   BUK963R3-60E






Part Number BUK963R3-60E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK963R3-60E DatasheetBUK963R3-60E Datasheet (PDF)

BUK963R3-60E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greate.

  BUK963R3-60E   BUK963R3-60E







N-Channel MOSFET

BUK963R3-60E 20 July 2012 N-channel TrenchMOS logic level FET Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 60 120 293 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 2.73 3.3 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 48 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 31 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK963R3-60E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Desc.


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