D2
PA K
BUK965R8-100E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profile
...
D2
PA K
BUK965R8-100E
N-channel TrenchMOS logic level FET
Rev. 2 — 16 May 2012 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel
MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications
w w w . D a t a S h e e t .
Transmission control Ultra high performance power switching
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1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source
voltage drain current total power dissipation drain-source on-state resistance gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11 VGS = 5 V; ID = 25 A; VDS = 80 V; see Figure 13; see Figure 14
[1]
Min -
Typ 4.62
Max 100 120 357 5.8
Unit V A W mΩ
Static characteristics
Dynamic characteristics QGD 51 nC
[1]
Continuous current is limited by package.
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NXP Semiconductors
BUK965R8-100E
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2...