BUK9675-55A Datasheet - TrenchMOS logic level FET

BUK9575-55A; BUK9675-55A TrenchMOS™ logic level FET Rev. 01 — 9 February 2001 Product speciﬁcation 1. Description N-cha...

BUK9575-55A; BUK9675-55A TrenchMOS™ logic level FET Rev. 01 — 9 February 2001 Product speciﬁcation 1. Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simpliﬁed outline and symbol Description gate (g) mb Simpliﬁed outline Symbol drain (d) source (s) mounting base; connected to drain (d) mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) Philips Semiconductors BUK9575-55A; BUK9675-55A TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 10 A Tj = 25 °C; VGS = 4.5 V; ID = 10 A Typ − − − − 64 − Max 55 20 62 175 75 81 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source vo...