BUK98180-100A
N-channel TrenchMOS logic level FET
16 March 2016
Product data sheet
1. General description
Logic level ...
BUK98180-100A
N-channel TrenchMOS logic level FET
16 March 2016
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources
3. Applications
12 V, 24 V and 42 V loads Automotive and general purpose power switching Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID
drain current
VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tsp = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C VGS = 4.5 V; ID = 5 A; Tj = 25 °C
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12; Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche energy
ID = 4 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit - - 100 V - - 4.6 A - - 8W
- 147 173 mΩ - - 201 mΩ - 153 180 mΩ
- - 16 mJ
Nexperia
BUK98180-100A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain
Simplified outline
4
123
SC-73 ...