BUK9E04-30B

BUK9E04-30B TrenchMOS™ logic level FET Rev. 01 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.3 J s ID ≤ 75 A s RDSon = 3.4 mΩ (typ) s Ptot ≤ 254 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT226 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) g s mb d Simplified outline Symbol MBB076 1 2 3 MBK112 SOT226 (I2-PAK) Philips Semiconductors BUK9E04-30B TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Package Name BUK9E04-30B I2-PAK Description Plastic single-ended package (Philips version of TO-220AB I2-PAK); low-profile 3 lead Version SOT226 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junc...