BUK9K17-60E

LF BUK9K17-60E 19 March 2014 PA K 56D Dual N-channel 60 V, 17 mΩ logic level MOSFET Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 60 26 53 Unit V A W Static characteristics FET1 and FET2 drain-source on-state resistance gate-drain charge 14 17 mΩ Dynamic characteristics FET1 and FET2 QGD ID = 10 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 5.7 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 5. Pinning information Table 2...