BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level MOSFET
24 February 2015
Product data sheet
1. General description...
BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level
MOSFET
24 February 2015
Product data sheet
1. General description
Dual logic level N-channel
MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual
MOSFET Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics FET1 and FET2
RDSon
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 resistance
Dynamic characteristics FET1 and FET2
QGD
gate-drain charge
ID = 5 A; VDS = 48 V; VGS = 5 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit - - 60 V - - 16 A - - 32 W
-
47.3 55
mΩ
- 2.3 - nC
Nexperia
BUK9K52-60E
Dual N-channel 60 V, 55 mΩ logic level
MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 dra...