BUK9M42-60E
N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33
30 March 2020
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate wit.
N-channel MOSFET
BUK9M42-60E
N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33
30 March 2020
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11
ID = 5 A; VDS = 48 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 60 V - - 22 A - - 44 W
- 34 42 mΩ
- 3.4 - nC
Nexperia
BUK9M42-60E
N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1S
Source
2S
Source
3S
Source
4G
Gate
mb D
Mounting base; connected to drain
1234
LFPAK33 (SOT1210)
Graphic sym.