BUK9M6R0-40H
N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33
29 January 2019
Product data sheet
1. General desc...
BUK9M6R0-40H
N-channel 40 V, 6.0 mΩ logic level
MOSFET in LFPAK33
29 January 2019
Product data sheet
1. General description
Automotive qualified logic level N-channel
MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
2. Features and benefits
Fully automotive qualified to AEC-Q101 at 175 °C Trench 9 superjunction technology:
Low power losses, high power density LFPAK copper clip package technology:
High robustness and reliability Gull wing leads for high manufacturability and AOI Repetitive avalanche rated
3. Applications
12 V automotive systems Powertrain, chassis, body and infotainment applications Medium/Low power motor drive DC-DC systems LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source
voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode Qr recovered charge
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
[1]
VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 11
ID = 20 A; VDS = 20 V; VGS = 4.5 V; Fig. 13; Fig. 14
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V
Min Typ Max Unit - - 40 V - - 50 A - - 70 W
3.4 4.9 6
mΩ
- 2.9 5.8 nC
- 17 - nC
Nexperia
BUK9M6R0-40H
N-channel 40 V, 6.0 mΩ logic...