BUK9MFF-65PSS

www.DataSheet4U.com BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits „ Integrated current sensors „ Integrated temperature sensors 1.3 Applications „ Lamp switching „ Motor drive systems „ Power distribution „ Solenoid drivers 1.4 Quick reference data Table 1. Symbol RDSon ID/Isense V(BR)DSS Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 13; see Figure 16 Tj = 25 °C; VGS = 5 V; see Figure 17 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 11.4 Max Unit 13.4 mΩ FET1 and FET2 static characteristics 5831 6479 7127 A/A 65 V www.DataSheet4U.com NXP Semiconductors BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol Description G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 gate 1 current sense 1 drain anode 1 cathode 1 gate 2 current sense 2 drain 2 anode 2 cathode 2 drain 2 Kelvin source 2 source 2 source 2 drain 2 drain 1 Kelvin sou...