BUK9MJJ-55PTT
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
1.2 Features and benefits
Integrated current sensors Integrated temperatur.
Dual TrenchPLUS Logic Level FET
BUK9MJJ-55PTT
www.DataSheet4U.com
Dual TrenchPLUS logic level FET
Rev. 01 — 14 May 2009 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
1.2 Features and benefits
Integrated current sensors Integrated temperature sensors
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 Tj = 25 °C; VGS = 5 V; see Figure 18 Tj = 25 °C; VGS = 0 V; ID = 250 µA Min Typ 13 Max 15 Unit mΩ Symbol Parameter RDSon drain-source on-state resistance ratio of drain current to sense current
Static characteristics, FET1 and FET2
ID/Isense
5850 55
6500 -
7150 -
A/A V
V(BR)DSS drain-source breakdown voltage
NXP Semiconductors
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BUK9MJJ-55PTT
Dual TrenchPLUS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 Description gate 1 current sense 1 drain 1 anode 1 cathode 1 gate 2 current sense 2 drain 2 anode 2 cathode 2 drain 2 Kelvin source 2 source 2 source 2 drain 2 drain 1 Kelvin source 1 s.