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BUK9MJJ-55PTT Datasheet

Part Number BUK9MJJ-55PTT
Manufacturers NXP
Logo NXP
Description Dual TrenchPLUS Logic Level FET
Datasheet BUK9MJJ-55PTT DatasheetBUK9MJJ-55PTT Datasheet (PDF)

BUK9MJJ-55PTT www.DataSheet4U.com Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits „ Integrated current sensors „ Integrated temperatur.

  BUK9MJJ-55PTT   BUK9MJJ-55PTT






Dual TrenchPLUS Logic Level FET

BUK9MJJ-55PTT www.DataSheet4U.com Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits „ Integrated current sensors „ Integrated temperature sensors 1.3 Applications „ Lamp switching „ Motor drive systems „ Power distribution „ Solenoid drivers 1.4 Quick reference data Table 1. Quick reference Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 16; see Figure 17 Tj = 25 °C; VGS = 5 V; see Figure 18 Tj = 25 °C; VGS = 0 V; ID = 250 µA Min Typ 13 Max 15 Unit mΩ Symbol Parameter RDSon drain-source on-state resistance ratio of drain current to sense current Static characteristics, FET1 and FET2 ID/Isense 5850 55 6500 - 7150 - A/A V V(BR)DSS drain-source breakdown voltage NXP Semiconductors www.DataSheet4U.com BUK9MJJ-55PTT Dual TrenchPLUS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 Description gate 1 current sense 1 drain 1 anode 1 cathode 1 gate 2 current sense 2 drain 2 anode 2 cathode 2 drain 2 Kelvin source 2 source 2 source 2 drain 2 drain 1 Kelvin source 1 s.


2009-07-07 : SSM3J108TU    SSM3J109TU    SSM3J110TU    SSM3J111TU    SSM3J112TU    SSM3J113TU    SSM3J115TU    SSM3J117TU    SSM3J118TU    SSM3J120TU   


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