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BUK9MPP-65PLL
Dual TrenchPLUS FET Logic Level FET
Rev. 01 — 27 May 2010 Objective data sheet
1. Pr...
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BUK9MPP-65PLL
Dual TrenchPLUS FET Logic Level FET
Rev. 01 — 27 May 2010 Objective data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
1.2 Features and benefits
Integrated current sensors Integrated temperature sensors
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown
voltage Conditions VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 17; see Figure 16 Tj = 25 °C; VGS = 5 V; see Figure 18 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 23 Max Unit 27 mΩ
FET1 and FET2 static characteristics
ID/Isense
3587 3986 4385 A/A
V(BR)DSS
65
-
-
V
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NXP Semiconductors
BUK9MPP-65PLL
Dual TrenchPLUS FET Logic Level FET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Pinning information Symbol Description G1 IS1 D1 A1 C1 G2 IS2 D2 A2 C2 D2 KS2 S2 S2 D2 D1 KS1 S1 S1 D1 gate 1 current sense 1 drain anode 1 cathode 1 gate 2 current sense 2 drain 2 anode 2 cathode 2 drain 2 Kelvin source 2 source 2 source 2 drain 2 drain 1 Kelv...