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BUK9Y113-100E Datasheet

Part Number BUK9Y113-100E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y113-100E DatasheetBUK9Y113-100E Datasheet (PDF)

BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate .

  BUK9Y113-100E   BUK9Y113-100E






Part Number BUK9Y113-100E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet BUK9Y113-100E DatasheetBUK9Y113-100E Datasheet (PDF)

LF BUK9Y113-100E 8 May 2013 PA K 56 N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logi.

  BUK9Y113-100E   BUK9Y113-100E







N-channel MOSFET

BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 100 V - - 12 A - - 45 W - 97 113 mΩ - 3.9 - nC Nexperia BUK9Y113-100E N-channel 100 V, 113 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source mb 2 S source 3 S source 4G mb D gate mounting base; connected to drai.


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