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BUK9Y12-100E Datasheet

Part Number BUK9Y12-100E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel 100V 12m ohm logic level MOSFET
Datasheet BUK9Y12-100E DatasheetBUK9Y12-100E Datasheet (PDF)

LF BUK9Y12-100E 9 May 2013 PA K 56 N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic .

  BUK9Y12-100E   BUK9Y12-100E






Part Number BUK9Y12-100E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y12-100E DatasheetBUK9Y12-100E Datasheet (PDF)

BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level ga.

  BUK9Y12-100E   BUK9Y12-100E







N-channel 100V 12m ohm logic level MOSFET

LF BUK9Y12-100E 9 May 2013 PA K 56 N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 Min Typ Max 100 85 238 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 9.5 12 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 24 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9Y12-100E N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gat.


2014-08-22 : BUK78150-55A    BUK9Y19-75B    BUK7Y28-75B    BUK9Y58-75B    BUK7Y54-75B    BUK9Y8R5-80E    BUK7Y7R8-80E    BUK9Y11-80E    BUK7Y9R9-80E    BUK9Y12-100E   


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