BUK9Y12-55B

BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for logic level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ Advanced braking systems (ABS) „ Automotive systems „ General purpose power switching „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 4 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 25 °C VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12; see Figure 13 Min Typ Max Unit - - 55 V - - 61.8 A - - 106 W - 8.1 11 mΩ - 9.1 12 mΩ Nexperia BUK9Y12-55B N-channel TrenchMOS logic level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics ID = 61.8...