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BUK9Y153-100E Datasheet

Part Number BUK9Y153-100E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description MOSFET
Datasheet BUK9Y153-100E DatasheetBUK9Y153-100E Datasheet (PDF)

LF BUK9Y153-100E 27 June 2014 PA K 56 N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True lo.

  BUK9Y153-100E   BUK9Y153-100E






Part Number BUK9Y153-100E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y153-100E DatasheetBUK9Y153-100E Datasheet (PDF)

BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gat.

  BUK9Y153-100E   BUK9Y153-100E







MOSFET

LF BUK9Y153-100E 27 June 2014 PA K 56 N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 5 V; ID = 2 A; Tj = 25 °C; Fig. 11 Min Typ Max 100 9.4 37 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 122 153 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 2 A; VDS = 80 V; Tj = 25 °C; Fig. 13; Fig. 14 3.1 nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source sour.


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