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BUK9Y19-55B Datasheet

Part Number BUK9Y19-55B
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9Y19-55B DatasheetBUK9Y19-55B Datasheet (PDF)

BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Logic level compatible.

  BUK9Y19-55B   BUK9Y19-55B






Part Number BUK9Y19-55B
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS logic level FET
Datasheet BUK9Y19-55B DatasheetBUK9Y19-55B Datasheet (PDF)

www.DataSheet4U.com BUK9Y19-55B N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 28 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General.

  BUK9Y19-55B   BUK9Y19-55B







N-channel MOSFET

BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Logic level compatible „ Very low on-state resistance 1.3 Applications „ 12 V and 24 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions VGS = 5 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 5 V; ID = 20 A; Tj = 25 °C; see Figure 12 and 13 ID = 46 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 46 A - - 85 W - 16.3 19 mΩ - - 80 mJ Nexperia BUK9Y19-55B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning Symbol S S S G D Description source source source gate mounting base; connected to drain 3. Ordering information Simplified outline mb 1234 SOT669 (LFPAK) Graphic symbol D G mbb076 S Table 3. Or.


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