BUK9Y3R5-40E

BUK9Y3R5-40E N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56 11 November 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 [1] Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. Min Typ Max Unit - - 40 V - - 100 A - - 167 W - 2.9 3.8 mΩ - 8.6 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9Y3R5-40E N-channel 40 V, 3.8 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information P...