BUK9Y4R8-60E

LF BUK9Y4R8-60E 8 May 2013 PA K 56 N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 60 100 238 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 3.3 4.8 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 48 V; Tj = 25 °C; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 18.1 - nC Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information...