BUK9Y59-60E
N-channel 60 V, 59 mΩ logic level MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description...
BUK9Y59-60E
N-channel 60 V, 59 mΩ logic level
MOSFET in LFPAK56
8 May 2013
Product data sheet
1. General description
Logic level N-channel
MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 5 A; VDS = 48 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 60 V - - 16.7 A - - 37 W
- 51 59 mΩ
- 2.5 - nC
Nexperia
BUK9Y59-60E
N-channel 60 V, 59 mΩ logic level
MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G mb D
gate
mounting base; connected to drain
1234
LFPAK56; PowerS...