® BUL138
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s H...
® BUL138
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
s NPN TRANSISTOR s HIGH
VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125oC
APPLICATIONS s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION The BUL138 is manufactured using high
voltage Multi Epitaxial Planar technology for high switching speeds and high
voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collector-Emitter
Voltage (VBE = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature
June 2001
Value 800 400 9 5 10 2 4 80
-65 to 150 150
Unit V V V A A A A W oC oC
1/6
BUL138
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
1.56 62.5
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
...