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BUL310PI

ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

www.DataSheet4U.com BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s s s SGS-THOMSON P...


ST Microelectronics

BUL310PI

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www.DataSheet4U.com BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LARGE RBSOA U.L. RECOGNISED ISOWATT220 PACKAGE (U.L. FILE # E81734 (N)): ISOLATION VOLTAGE 1500VRMS 1 2 3 1 2 3 TO-220 ISOWATT220 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL310 and BUL310PI are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL 310 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. O perating Junction Temperature 75 -65 to 150 150 1000 500 9 5 10 3 4 35 Value BUL310PI V V V V A A A W o o INTERNAL SCHEMATIC DIAGRAM Uni t C C 1/7 September 1997 BUL310/PI T...




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