®
BUL312FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s s s
HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNA...
®
BUL312FP
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s s s
HIGH
VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
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3
APPLICATIONS HORIZONTAL DEFLECTION FOR TV s SMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
s
TO-220FP
DESCRIPTION The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high switching speeds and high
voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter
Voltage (V BE = 0) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand
Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 1500 -65 to 150 150 Unit V V V A A A A W V
o o
C C
March 2004
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BUL312FP
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.5 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise speci...