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BUL39D Datasheet

Part Number BUL39D
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BUL39D DatasheetBUL39D Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V V.

  BUL39D   BUL39D






Part Number BUL39D
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description High voltage fast-switching NPN power transistor
Datasheet BUL39D DatasheetBUL39D Datasheet (PDF)

BUL39D High voltage fast-switching NPN power transistor Features ■ Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic transformer for halogen lamp Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed for use in elec.

  BUL39D   BUL39D







Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39D DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp<5ms IB Base Current-Continuous 8A 2A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4 70 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case 1.78 ℃/W Thermal Resistance,Junction to Ambient 70 ℃/W isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Volt.


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