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BUL3N7
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Features
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MEDIUM VOLTAGE CAPABILI...
www.DataSheet4U.com
BUL3N7
MEDIUM
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Features
■ ■ ■ ■
MEDIUM
VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
2 3
Applications
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1
ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
TO-220
Description
The BUL3N7 is manufactured using high
voltage Multi-Epitaxial Planar technology for high switching speeds and medium
voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast
voltage FED where it is coupled with the BUL3P5, its complementary PNP transistor.
Internal Schematic Diagram
Order Codes
Part Number BUL3N7 Marking BUL3N7 Package TO-220 Packing TUBE
December 2005
rev.1 1/10
www.st.com 10
1 Absolute Maximum Ratings
BUL3N7
1
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter Collector-Emitter
Voltage (VBE = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value 700 400 V(BR)EBO 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W °C °C
Table 2.
Symbol RthJ-case...